PART |
Description |
Maker |
GS74104J GS74104TP |
1M x 4 4Mb Asynchronous SRAM
|
GSI Technology
|
GS74117AX-8I GS74117AX GS74117AX-10 GS74117AX-10I |
256K x 16 4Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM From old datasheet system
|
List of Unclassifed Manufacturers ETC[ETC]
|
GS88018BT-133 GS88018BT-133I GS88018BT-150 GS88018 |
133MHz 8.5ns 512K x 18 9Mb sync burst SRAM 150MHz 7.5ns 512K x 18 9Mb sync burst SRAM 166MHz 7ns 512K x 18 9Mb sync burst SRAM 200MHz 6.5ns 512K x 18 9Mb sync burst SRAM 225MHz 6ns 512K x 18 9Mb sync burst SRAM 250MHz 5.5ns 512K x 18 9Mb sync burst SRAM
|
GSI Technology
|
N04L63W1AB27I N04L63W1AB27IT N04L63W1AT27I N04L63W |
4 Mb Ultra-Low Power Asynchronous CMOS SRAM 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit
|
ON Semiconductor
|
N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit 8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48 8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
|
ON Semiconductor
|
M68AW511A M68AW511AL55MC1T M68AW511AL55MC6T M68AW5 |
4 Mbit (512K x8) 3.0V Asynchronous SRAM
|
ST Microelectronics STMicroelectronics
|
GS78116B-10 GS78116B-10I GS78116B-12I GS78116B-15 |
512K x 16 8Mb Asynchronous SRAM
|
GSI Technology
|
HY62VF08401C HY62VF08401C-SS55I |
512K X 8 STANDARD SRAM, 55 ns, PDSO32 Super Low Power Slow SRAM - 4Mb
|
HYNIX SEMICONDUCTOR INC
|
IS61LV51216-10M IS61LV51216-10MI IS61LV51216-10T I |
512K x 16 HIGH SPEED ASYNCHRONOUS 12k × 16高速异
|
Electronic Theatre Controls, Inc. ISSI[Integrated Silicon Solution, Inc] ETC Integrated Silicon Solution Inc
|