PART |
Description |
Maker |
CY7C1429AV18 CY7C1422AV18 |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构36-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构(2字突发结36 -兆位的DDR - II二氧化硅的SRAM 36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture(2字Burst结构6-Mbit DDR-II SIO SRAM) 36兆位的DDR - II二氧化硅的SRAM 2字突发架构(2字突发结36 -兆位的DDR - II二氧化硅的SRAM
|
Cypress Semiconductor Corp.
|
CY7C1992CV18-200BZC CY7C1992CV18-200BZI CY7C1992CV |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture 512K X 36 DDR SRAM, 0.45 ns, PBGA165
|
CYPRESS SEMICONDUCTOR CORP
|
CY7C1523KV18 CY7C1524KV18 |
72-Mbit DDR II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor
|
CY7C1422AV18-167BZXC CY7C1423AV18 CY7C1423AV18-167 |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress
|
CY7C1393AV18-167BZC |
18-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
Cypress Semiconductor Corp.
|
K7J643682M07 K7J641882M |
2Mx36 & 4Mx18 DDR II SIO b2 SRAM
|
Samsung semiconductor
|
CY7C1566V1808 CY7C1566V18-400BZC CY7C1566V18-400BZ |
4M X 18 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor, Corp.
|
CY7C1318CV18-200BZXC |
18-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1420BV18-250BZC |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
CY7C1250V18-300BZI CY7C1246V18-333BZI CY7C1246V18- |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的DDR - II SRAM2字突发架构(2.0周期读写延迟 36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1518KV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|