| PART |
Description |
Maker |
| KU3600N10D |
N CHANNEL TRENCH MOS FIELD EFFECT TRANSISTOR
|
KEC(Korea Electronics)
|
| 2SK1959 2SK1959-T1 |
N Channel enhancement MOS FET
MOS Field Effect Transistor
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| TPCF8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| KUS086N10F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KUS035N06F |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU310N10D-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| UPA1807 UPA1807GR-9JG UPA1807GR-9JG-E1 UPA1807GR-9 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | SO
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N Channel enhancement MOS FET
|
NEC Corp.
NEC[NEC]
|
| UPA505T PA505T G11241EJ1V0DS00 |
From old datasheet system
MOS Field Effect Transistor
N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS
|
NEC[NEC]
|
| VSSA3L6S-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VT6045C-M3 VT6045CHM3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
