PART |
Description |
Maker |
GS82582DT19AGE-400 GS82582DT19AGE-375 GS82582DT19A |
288Mb SigmaQuad-II TM Burst of 4 SRAM
|
GSI Technology
|
GS8662Q08E-167 GS8662Q08E-250 GS8662Q08E-300I GS86 |
72Mb SigmaQuad-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
GS8182D18D-200I GS8182D18D-167 GS8182D18D-250 GS81 |
18Mb Burst of 4 SigmaQuad-II SRAM
|
GSI[GSI Technology]
|
GS8180Q18D-100 GS8180Q18D-200 GS8180Q18D-200I GS81 |
Separate I/O SigmaQuads 18Mb Burst of 2 SigmaQuad SRAM
|
GSI[GSI Technology]
|
GS8180DV18D-133I GS8180DV18D-200I GS8180DV18D-250 |
18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 3 ns, PBGA165 18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 2.3 ns, PBGA165 18Mb Burst of 4 SigmaQuad SRAM 1M X 18 STANDARD SRAM, 2.1 ns, PBGA165
|
GSI Technology, Inc.
|
MT49H32M9 MT49H8M36 MT49H16M18 |
288Mb CIO Reduced Latency
|
Micron Technology, Inc.
|
K4C89083AF K4C89093AF |
288Mb x18 Network-DRAM2 Specification
|
Samsung semiconductor
|
MT49H16M18C MT49H32M9C MT49H16M18CFM-XX MT49H32M9C |
288Mb SIO REDUCED LATENCY(RLDRAM II)
|
Micron Technology, Inc.
|
GS88019AT-133 GS88019AT-133I GS88019AT-150I GS8801 |
512K X 18 CACHE SRAM, 3.5 ns, PQFP100 250MHz 512K x 18 9Mb sync burst SRAM 225MHz 512K x 18 9Mb sync burst SRAM 200MHz 512K x 18 9Mb sync burst SRAM 166MHz 512K x 18 9Mb sync burst SRAM 150MHz 512K x 18 9Mb sync burst SRAM 133MHz 512K x 18 9Mb sync burst SRAM 150MHz 256K x 32 9Mb sync burst SRAM 166MHz 256K x 32 9Mb sync burst SRAM 225MHz 256K x 32 9Mb sync burst SRAM 250MHz 256K x 32 9Mb sync burst SRAM 133MHz 256K x 36 9Mb sync burst SRAM 150MHz 256K x 36 9Mb sync burst SRAM 166MHz 256K x 36 9Mb sync burst SRAM 200MHz 256K x 36 9Mb sync burst SRAM 225MHz 256K x 36 9Mb sync burst SRAM 133MHz 256K x 32 9Mb sync burst SRAM 200MHz 256K x 32 9Mb sync burst SRAM 250MHz 256K x 36 9Mb sync burst SRAM
|
GSI Technology
|