| PART |
Description |
Maker |
| MIC4123 MIC4123YME MIC4123YML MIC4124 MIC4124YME M |
Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
|
MIC GROUP RECTIFIERS
Micrel Semiconductor
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| RN4608 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| RN4607 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| TVEZ-2-0-0-000-0-000000-00 TVEZ-6-6-0-000-0-000000 |
PROCESS RECORDER 6 INPUT
PROCESS RECORDER 2 INPUT 2输入过程记录
PROCESS RECORDER 4 INPUT 4输入过程记录
|
PRECI-DIP SA
|
| MTD2006F |
Power ICs / Stepper Motor Drivers (MTD Series) Operation : Bipolar
Dual full-bridge for a bipolar motor
|
Shindengen Electric Mfg.Co.Ltd
|
| IRF3205LTRR IRF3205S IRF3205STRR |
75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
Advanced Process Technology
|
International Rectifier
|
| IRF7101PBF IRF7101TRPBF IRF7101PBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET? Power MOSFET
HEXFET㈢ Power MOSFET
Adavanced Process Technology
|
IRF[International Rectifier]
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| 82S129 N82S126A N82S126N N82S129A N82S129N 82S126 |
V(cc): 7.0V; V(in): 5.5V; ; 1Kbit TTL bipolar PROM. For phototyping/volume production, sequential conrollers, format conversion, hardwired algorithms, etc.
1K BIT TTL BIPOLAR PROM
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| ZTX601A ZTX600Z ZTX600AZ ZTX600BZ ZTX601B |
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600B(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600A(Z)
Discrete - Bipolar Transistors - Darlington Transistors - ZTX600(Z)
NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
|
Diodes
List of Unclassifed Manufacturers
|
