| PART |
Description |
Maker |
| MR1722 MR1501 MR1511 MR1521 MR1531 |
(MR1xxx) Partial Resonance PS IC
|
Shindengen Electric
|
| CAT24WC66WE-1.8-GT2C CAT24WC66WE-1.8-GT3C CAT24WC6 |
64-Kb I2C Serial EEPROM with Partial Array Write Protection
|
http://
ON Semiconductor
|
| NCP1351 |
The NCP1351 is a current mode controller targeting low power off line flyback Switched Mode Power Su
|
ON Semiconductor
|
| AWT6130 |
The AWT6130 provides the additional output power margin RF designers need to overcome additional post-PA insertion loss in tri-mode ...
Cellular Dual Mode AMPS/CDMA 3.5V 29dBm Power Amplifier Module
|
Anadigics Inc
ANADIGICS, Inc
|
| ADP1871 |
Synchronous Buck Controller with Constant On-Time, Valley Current Mode, and Power Save Mode
|
Analog Devices
|
| STB55NE06 5405 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FSQ0265 FSQ0165 FSQ0165RLX FSQ0265RLX FSQ321L FSQ3 |
Green Mode Fairchild Power Switch for Valley Switching Converter ?Low EMI and High Efficiency
Green Mode Fairchild Power Switch (FPS)
Green Mode Fairchild Power Switch (FPS)
|
Fairchild Semiconductor
|
| DS28E10P DS28E10RT DS28E10PT DS28E1011 CAT1021YI-3 |
1-Wire SHA-1 Authenticator Irreversible Write Protection
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
2K/4K-Bit Serial EEPROM with Partial Array Write Protection 2K/4K-Bit偏串行EEPROM阵列写保
|
Maxim Integrated Products
|
| IRFZ40 IRFZ40FI 3019 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STB55NE06L 5722 |
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N娌??澧?己妯″????MOSFET)
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
From old datasheet system
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N沟道增强模式功率MOSFET) N沟道增强模式“的单一的功能SIZETM”功率MOSFET（不适用沟道增强模式功率MOSFET的）
|
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
