| PART |
Description |
Maker |
| MR0A16A MR2A16AYS35 MR2A16AVYS35 MR0A16AYS35 MR1A1 |
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64Kx 16位的3.3V异步磁阻随机存取内存
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64K的x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司
|
| Q65210-D250-W5 FP210D250-22 |
Differential Magnetoresistive Sensor
|
Infineon Technologies AG
|
| SM353RT |
Magnetoresistive Sensor ICs
|
Honeywell Solid State E...
|
| FP201L100 Q65210-L101 FP201L10 |
Differential Magnetoresistive Sensor
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MZTK06N1001/KS35 |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, 4mT
|
Integrated Circuit Technology Corp
|
| MZTK06P1001/KS35 |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, 4mT
|
Integrated Circuit Technology Corp
|
| MR4S16AYS35 MR0A08ACYS35 MR0A08AVYS35 MR0A08AYS35 |
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MR4S16AVYS35 MR0A08ACTS35C MR0A08ACYS35 MR0A08AVTS |
256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
|
FREESCALE[Freescale Semiconductor, Inc]
|
| FP212L100-22 Q65212-L1004 FP212L10 |
Differential Magnetoresistive Sensor 差分磁阻传感
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MZCK03P1001/KS35 |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, 2.8mT, RECTANGULAR
|
ITT, Corp.
|
| 2SS52M-T3 |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, 0.4-2.5mT, 20mA, RECTANGULAR, THROUGH HOLE MOUNT
|
HONEYWELL SENSING AND CONTROL
|
| BZX84C8V2LT1 BZX84C9V1LT1 BZX84C10LT1 BZX84C11LT1 |
SEMICONDUCTOR
|
ETL[E-Tech Electronics LTD]
|
