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FGA65A3H - VCE = 650 V, IC = 15 A Trench Field Stop IGBT

FGA65A3H_9079753.PDF Datasheet


 Full text search : VCE = 650 V, IC = 15 A Trench Field Stop IGBT
 Product Description search : VCE = 650 V, IC = 15 A Trench Field Stop IGBT


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IRGPS4067DPBF Low VCE (on) Trench IGBT Technology
International Rectifier
FGH50T65UPD 650V, 50A, Field Stop Trench IGBT
650 V, 50 A Field Stop Trench IGBT
Fairchild Semiconductor
SEMIX653GD176HDC Trench IGBT Modules 650 A, 1700 V, N-CHANNEL IGBT
SEMIKRON[Semikron International]
APT100GN60B2 APT100GN60B2G B2G Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: T-MAX™ [B2]; BV(CES) (V): 600; VCE(sat) (V): 1.5; IC (A): 87;
IGBT
MICROSEMI POWER PRODUCTS GROUP
ADPOW[Advanced Power Technology]
2SB1424 Low VCE(sat). VCE(sat) = -0.2V (Typ.) (IC/IB = -2A / -0.1A) Excellent DC current gain characteristics.
TY Semiconductor Co., Ltd
2SD1760 Low VCE(sat), VCE(sat) = 0.5V (typical) Collector-base voltage VCBO 60 V
TY Semiconductor Co., Ltd
2SC5585 Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA
TY Semiconductor Co., Ltd
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 :SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
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INTERSIL[Intersil Corporation]
Intersil, Corp.
STP9N65M2 STD9N65M2 STF9N65M2    Extremely low gate charge
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package
N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
STMicroelectronics
ST Microelectronics
STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 CD0022    High dv/dt capability
N-channel 650 V, 0.070 Ω, 33 A MDmesh?V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
N-channel 650 V, 0.070 Ω, 33 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247
N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET
N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in I2PAK
STMicroelectronics
ST Microelectronics
 
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