| PART |
Description |
Maker |
| UESD3.3ST5G |
ESD Protection Diodes In Ultra Small SOD−723 Package
|
ONSEMI[ON Semiconductor]
|
| UESD5.0DT5G UESD6.0DT5G UESD3.3DT5G |
ESD Protection Diodes - In Ultra Small SOT−723 Package
|
ONSEMI[ON Semiconductor]
|
| CM1205-16CS CM1205 CM1205-04CS CM1205-08CS CM1205- |
ESD Protection Arrays, Chip Scale Package ESD保护阵列，芯片级封装
4, 8 and 16-Channel ESD Protection Arrays in Chip Scale Package with OptiGuard™ Coating (PACDN14xxC pin compatible)
|
California Micro Devices Corporation
CALMIRCO[California Micro Devices Corp]
|
| CM1206-16CP CM1206-16CS L06 CM1206-04CP CM1206-04C |
ESD Protection Arrays, Chip Scale Package
4, 8 and 16-Channel ESD Protection Arrays in Chip Scale Package with OptiGuard™ Coating (PACDN24xxC pin compatible)
|
California Micro Devices Corporation
|
| NTK3142PT5G NTK3142PT1G NTK3142P |
Small Signal Power MOSFET -20 V, -280 mA, P-Channel with ESD Protection, SOT-723
Small Signal MOSFET ?0 V, ?80 mA, P?Channel with ESD Protection, SOT?23
|
Rectron Semiconductor
|
| TC74HC238AP TC74HC238AF |
6 Line EMI Filter with ESD Protection DFN 1.35 x 3.0 mm Package; Package: DFN12 3.0x1.35, 0.5P; No of Pins: 12; Container: Tape and Reel; Qty per Container: 3000
6 Channel EMI Pi-Filter Array with ESD Protection; Package: 15 PIN FLIP-CHIP CSP; No of Pins: 15; Container: Tape and Reel; Qty per Container: 3000
|
Toshiba Corporation
|
| DF3A3.3FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 12.47 to 13.03; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A8.2LFU07 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.65 to 2.90; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD)
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A6.2FU |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 16.35 to 17.09; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF2S16FS |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 9.45 to 9.87; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| DF3A5.6LFE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 15.37 to 16.01; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Product for Use Only as Protection against Electrostatic Discharge (ESD).
|
Toshiba Corporation
Toshiba Semiconductor
|
| NTJD4401N08 NTJD4401NT2G |
Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection
|
ON Semiconductor
|
