| PART |
Description |
Maker |
| D5DA881M5K2E4 |
FBAR/SAW Devices (SAW Duplexers)
|
Taiyo Yuden (U.S.A.), I...
|
| F5QA751M0M2QM |
FBAR/SAW Devices (SAW Type)
|
Taiyo Yuden (U.S.A.), I...
|
| D6HQ2G655DP01-Q D6HQ2G655DP01-ZA D6HQ2G655DP01-Y D |
FBAR/SAW Devices (FBAR Duplexers)
|
Taiyo Yuden (U.S.A.), I...
|
| KFX0414T |
900MHz Cordless Phone
SPECIFICATIONS FOR SAW DUPLEXER (RF DUPLEXER FOR CORDLESS PHONE CIS)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| 942P24A CMD810C897 CMD810C897-942P24A |
DIELECTRIC DUPLEXER SAMPLE
DIELECTRIC DUPLEXER SAMPLE SPECIFICATION
|
SIPAT Co,Ltd
|
| PJ3100 |
7V; 300mA CMOS LDO with enable. For battery-powered devices, personal communication devices
|
PROMAX-JOHNTON
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| LR4-380XF LR4-600XF VTP210SL19.2_5.8 MINISMDE190F- |
PolySwitch Resettable Devices Strap Battery Devices
|
Tyco Electronics
|
| PICOSMD035F MINISMDC100F MINISMDC200S MINISMDC150F |
PolySwitch Resettable Devices Surface-mount Devices
|
Tyco Electronics
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| MINISMDC150 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
