| PART |
Description |
Maker |
| CMPA5585025D |
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA601C025F |
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2560025F-AMP CMPA2560025F-TB CMPA2560025F-15 |
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
|
Cree, Inc
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| RFPP3870 |
GaAs/GaN Push Pull Hybrid GaAs/GaN Push Pull Hybridz
|
RF Micro Devices
|
| CGY21 Q68000-A5953 |
GaAs MMIC (Two-stage monolithic microwave IC MMIC amplifier)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CGY93 |
GSM 2 stage Power Amplifier MMIC
GaAs MMIC
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| SSW208 |
DC-4 GHz, High Isolation GaAs MMIC SPDT Switch DC - 4型频率，高隔离的GaAs MMIC SPDT开
|
Stanford Microdevices
|
| NJG1106KB2 NJG1106KB2-C1 NJG1106KB2-C2 NJG1106KB2- |
800MHz BAND LNA GaAs MMIC 800MHz频段低噪声放大器的GaAs MMIC
|
New Japan Radio Co., Ltd.
NJRC[New Japan Radio]
http://
|
| 2730GN-100L |
GaN Transistors
|
Microsemi
|
| 1416GN-120E 1416GN-120EL 1416GN-120EP |
GaN Transistors
|
Microsemi
|
