PART |
Description |
Maker |
HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system Radiation Hardened Hex Inverter JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
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INTERSIL[Intersil Corporation]
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MCP6547 MCP6549 MCP6546 MCP6548 MCP6547-I/MS MCP65 |
The MCP6549 is an Open Drain, quad comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the sixteen lead The MCP6546 is an Open-Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ... The MCP6549 is an Open Drain, quad comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ... The MCP6547 is an Open Drain, dual comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the eight lead PD The MCP6546 is an Open-Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current of 600 nA and a maximum of 1 microamp and is 10V output capable. This device is offered in the eight lead The MCP6548 is an Open Drain, single comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ... The MCP6547 is an Open Drain, dual comparator. This single-ended device operates from 1.6V to 5.5V, with typical quiescent current ... OPEN-DRAIN OUTPUT SUB-MICROAMP COMPARATORS
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MICROCHIP[Microchip Technology]
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24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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2SK845 |
Drain Current ?ID=5A@ TC=25C
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Inchange Semiconductor ...
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2SK1464 |
Drain Current ?ID=8A@ TC=25C
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Inchange Semiconductor ...
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2SK1462 |
Drain Current ?ID=8A@ TC=25C
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Inchange Semiconductor ...
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2SK996 |
Drain Current ?ID=4A@ TC=25C
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Inchange Semiconductor ...
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2SK630 |
Drain Current ?ID=5A@ TC=25C
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Inchange Semiconductor ...
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2SK752 |
Drain Current ?ID= 3A@ TC=25C
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Inchange Semiconductor ...
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