| PART |
Description |
Maker |
| 2N7002T |
SOT-523 Plastic-Encaps u late MOSFET
|
Jiangsu High diode Semi...
|
| BZX84C10T |
SOT-523 Plastic-Encapsulate Diodes
|
TY Semiconductor Co., Ltd
|
| 2N7002T |
SOT-523 Plastic-Encapsulate MOSFETS
|
WILLAS ELECTRONIC CORP
|
| 2SC4617-Q |
SOT-523 Plastic-Encapsulate Biploar Transistors
|
Micro Commercial Components
|
| 2SA1832-GR 2SA1832-Y |
SOT-523 Plastic-Encapsulate Biploar Transistors
|
Micro Commercial Components
|
| DDTA114EE DDTA115EE DDTA123EE DDTA124EE DDTA144EE |
PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
PNP PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR 进步党预偏置信号小的SOT - 523表面贴装晶体
|
Diodes Inc.
DIODES[Diodes Incorporated]
Diodes, Inc.
|
| DDTA122LE-7-F DDTA122TE-7-F DDTA142JE-7-F |
PNP PRE-BIASED 100 mA SOT-523 SURFACE MOUNT TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP PRE-BIASED 100 mA SOT-523 SURFACE MOUNT TRANSISTOR 进步党预偏置100毫安的SOT - 523表面贴装晶体
|
Diodes Inc.
Diodes, Inc.
|
| MCM63R836 MCM63R918FC3.7R MCM63R918FC3.3R |
512K X 18 LATE-WRITE SRAM, 1.65 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
512K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
MCM63R836
|
FREESCALE SEMICONDUCTOR INC
Freescale Semiconductor, Inc.
|
| DDTC123EE1 DDTC144EE-7-F DDTC114EE DDTC114EE-7-F D |
NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| SCS520S-40 |
SOD-523 Plastic-Encapsulate Diodes
|
WILLAS ELECTRONIC CORP
|
| MCM63R818FC3.7R |
256K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
|
Freescale Semiconductor, Inc.
|
