| PART |
Description |
Maker |
| IRS23364D IRS23364DJPBF IRS23364DJTRPBF IRS23364DP |
HIGH VOLTAGE 3 PHASE GATE DRIVER IC
|
International Rectifier
|
| IW4012BD IW4012BN |
Dual 4-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
| IW4070BD IW4070B |
Quad Exclusive-OR Gate High-Voltage Silicon-Gate CMOS
|
IK Semicon Co., Ltd
|
| HIP4083 HIP4083AB HIP4083AP |
80V/ 300mA Three Phase High Side Driver
80V, 300mA Three Phase High Side Driver
30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN
|
INTERSIL[Intersil Corporation]
|
| KK74HC4046AD KK74HC4046A KK74HC4046AN |
Phase-Locked Loop High-Performance Silicon-Gate CMOS
|
KODENSHI CORP.
KODENSHI KOREA CORP.
|
| CAT24FC32ALTE13 CAT24FC32AYTE13 CAT24FC32A CAT24FC |
32-kb I
32K-Bit Fast Mode I2C Serial CMOS EEPROM
ER 2C 2#8 SKT PLUG
LM5104 High Voltage Half-Bridge Gate Driver with Adaptive Delay; Package: SOIC NARROW; No of Pins: 8
LM5102 High Voltage Half-Bridge Gate Driver with Programmable Delay; Package: LLP; No of Pins: 10
|
CATALYST[Catalyst Semiconductor]
|
| MAX8523 |
"High-Speed, Dual-Phase Gate Driver for Multiphase, Step-Down Converters"
|
Maxim
|
| HCS04MS FN3046 HCS04D HCS04DMSR HCS04HMSR HCS04K H |
From old datasheet system
Radiation Hardened Hex Inverter
JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-50V; Zero Gate Voltage Drain Current Min, Idss:0.5mA; Zero Gate Voltage Drain Current Max, Idss:12mA; Gate-Source Cutoff Voltage Max, Vgs(off):-1.5V
|
INTERSIL[Intersil Corporation]
|
| A6276ELP-T A6276EA-T A6276SLWTR-T 6276_03 A6276ELP |
16-BIT SERIAL-INPUT, CONSTANT CURRENT LATCHED LED DRIV ER
|
ALLEGRO[Allegro MicroSystems]
|
| IW4001B IW4001BD IW4001BN |
Quad 2-input NOR gate, high-voltage silicon-gate CMOS
Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS
|
INTEGRAL[Integral Corp.]
ETC[ETC]
INTEGRAL JOINT STOCK COMPANY
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
