PART |
Description |
Maker |
PE15A1008 |
23 dBm IP3, 1.6 dB NF, 13 dBm, 20 MHz to 3 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
TM053-059-09-39 |
5.3 - 5.9 GHz 39 dBm Power Module
|
Transcom, Inc.
|
TM053-059-12-33 |
5.3 - 5.9 GHz 33 dBm Power Module
|
Transcom, Inc.
|
PE15A1010 |
40 dB Gain, 0.9 dB NF, 14 dBm, 2 GHz to 6 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
CFK2162-P107 CFK2162-P1 CFK2162-P1-000T |
0.8-1.0 GHz 34 dBm Power GaAs FET
|
http:// Mimix Broadband
|
CFH2162-P3 |
1.8 to 2.0 GHz 36 dBm Power GaAs FET
|
Mimix Broadband
|
CFH2162-P5 |
2.3 to 2.5 GHz 36 dBm Power GaAs FET
|
Mimix Broadband
|
PB-CMM3566-LC-0000 CMM3566-LC07 CMM3566-LC CMM3566 |
3.4 to 3.5 GHz, 7.0V, 24 dBm W-CDMA Power Amplifier
|
Mimix Broadband
|
CMM1335-AK-00ST CMM1335-AK-00T0 CMM1335-AK-00TT |
1.85 to 1.91 GHz, 5.8 V, 32 dBm PCS/PCN power amplifier
|
CELERITEK
|
Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz) From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
TM005-020-15-20 |
0.5 - 2 GHz 20 dBm Module
|
Transcom, Inc.
|