| PART |
Description |
Maker |
| IRFU2407 IRFR2407 |
Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A?
Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=75V Rds(on)=0.026ohm Id=42A)
Power MOSFET(Vdss=75V, Rds(on)=0.026ohm, Id=42A?)
|
IRF[International Rectifier]
|
| FDMS8670S07 FDMS8670S |
N-Channel PowerTrench? SyncFET TM 30V, 42A, 3.5m
N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3.5mз
|
FAIRCHILD[Fairchild Semiconductor]
|
| SPI42N03S2L-13 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-262, RDSon = 12.9mOhm, 42A, LL
|
Infineon
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| IRFP150N IRFP150 |
Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rdson）\u003d 0.035W，身份证\u003d 42A条）
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFBC20L IRFBC20S |
Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
IRF[International Rectifier]
|
| IRF1310NSTRR |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 42A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 42A条（丁）|63AB
|
International Rectifier, Corp.
|
| IRG4PSH71KD IRG4PSH71 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A)
|
IRF[International Rectifier]
|
| FDMS8020 |
N-Channel PowerTrenchMOSFET 30V, 42A, 2.5m
N-Channel PowerTrench? MOSFET 30 V, 42 A, 2.5 mΩ
|
Fairchild Semiconductor
|
| STD2HNK60Z STD2HNK60Z-1 STQ2HNK60ZR-AP STF2HNK60Z |
0.5 A, 600 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-92 TO-92, 3 PIN
N-channel 600V - 4.4楼? - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH垄芒 Power MOSFET
N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH?/a> Power MOSFET
N-channel 600V - 4.4Ω - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH Power MOSFET
N-channel 600V - 4.4ヘ - 2A - TO-92/TO-220FP/DPAK/IPAK Zener-protected SuperMESH⑩ Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
