| PART |
Description |
Maker |
| BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop
|
Infineon
|
| SBA520AF-17 SBA520AF-R1-00001 SBA520AF-R2-00001 |
EXTREME LOW VF SCHOTTKY RECTIFIER
|
Pan Jit International I...
|
| SVM860UB |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| SBT10100UCT |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| SVT12120U-16 SVT12120U-R2-00001 |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| SBA320AF-R2-00001 SBA330AF-R1-00001 SBA330AF-R2-00 |
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
EXTREME LOW VF SCHOTTKY BARRIER RECTIFIER
|
Pan Jit International I...
|
| NTSA4100 |
Schottky Rectif
|
ON Semiconductor
|
| IDT71B74S10TP IDT71B74S10Y IDT71B74S12TP IDT71B74S |
M C SWITCH EXTREME 10/100SM 24-VDC SC
M C SWITCH EXTREME 10/100MM 48-VDC ST
M C SWITCH EXTREME 10/100MM 24-VDC ST
M C SWITCH EXTREME 10/100MM 95-260-VAC ST
MC SWITCH STANDARD 10/100MM 115-VAC SC
MC SWITCH EXTREME 10/100 SM ST 12-VDC
BiCMOS STATIC RAM 64K (8K x 8-BIT) CACHE-TAG RAM
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| SPP03N60C3 SPP03N60C309 SPA03N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP04N60S5 SPP04N60S507 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP15N60C3 SPP15N60C309 SPI15N60C3 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
Cool MOS?Power Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
