PART |
Description |
Maker |
BM60013FV-C BM60013FV-CE2 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
|
Rohm
|
BM6105FW-LBZ |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
|
ROHM
|
BAV99S Q62702-A1277 |
Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
BM60015FV-LB BM60015FV-LBE2 |
Isolation voltage 3750Vrms 1ch Gate Driver Providing Galvanic Isolation
|
Rohm
|
BM60014FV-C-15 |
Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation
|
Rohm
|
2SC4710LS 0929 |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications From old datasheet system 2100V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
MAX1745 MAX1745AUB MAX1745EUB MAX1744 MAX1744EUB M |
High-Voltage, Step-Down DC-DC Controller in uMAX High-Voltage, Step-Down DC-DC Controller in レMAX High-Voltage, Step-Down DC-DC Controller in ??AX High-Voltage Step-Down DC-DC Controller in MAX Replaced by TMS320C6410 : Digital Signal Processor 40-PDIP 0 to 70 High-Voltage, Step-Down DC-DC Controller in MAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10 High-Voltage, Step-Down DC-DC Controller in µMAX SWITCHING CONTROLLER, 330 kHz SWITCHING FREQ-MAX, PDSO10 High-Voltage, Step-Down DC-DC Controller in MAX 高压、降压型DC-DC控制器,µMAX封装
|
MAXIM[Maxim Integrated Products] Maxim Integrated Products, Inc.
|
2SC4632LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications 1200V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
JHV3680 JHV36 JHV3612 JHV3616 JHV3620 JHV3624 JHV3 |
High Voltage Rectifier; Package: SEE_FACTORY; IO (A): 54; IFSM (A): 1200; Vrwm (V): 28000; IR (µA): 6000; SILICON, VOLTAGE MULTIPLIER DIODE HIGH VOLTAGE RECTIFIER ASSEMBLY
|
MICROSEMI[Microsemi Corporation]
|
BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc. STMicroelectronics
|
2SC3645 |
High-Voltage Switching Applications Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor TY Semiconductor Co., Ltd
|