| PART |
Description |
Maker |
| VT6045C-M3 VT6045CHM3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| MBRB20100CT-4W MBRB20100CT-8W MBRB20100CT-E3 |
Trench MOS Schottky technology
|
Kersemi Electronic Co.,...
|
| STB30H100C |
Trench MOS Schottky technology
|
Sangdest Microelectroni...
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| V10WL45-M3 V10WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| V20WL45-M3 20WL45-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| VFT1080S |
Trench MOS Barrier Schottky Rectifier
|
Vishay
|
| VT10200C-M3-15 |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| 3L60-DO |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
| V10WM100-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
| TSP15U50S |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
|
