| PART |
Description |
Maker |
| SSR40C20 SSR40C30 SSR40C30CT SSR40C20CTM |
20 A, 200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA
40A / 300V Schottky Silicon Carbide Centertap Rectifier
|
SOLID STATE DEVICES INC
Solid States Devices, Inc
|
| SCT3040KLGC11 |
N-channel Silicon Carbide Power MOSFET
|
ROHM
|
| BTS725-L1 BTS725-L1E3240 |
2 Channel PROFET Smart High Side Powe...
|
Infineon
|
| GL194A |
N P N S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| SHD619112P |
HERMETIC SILICON CARBIDE RECTIFIER
10 A, 1200 V, SILICON CARBIDE, RECTIFIER DIODE
|
SENSITRON SEMICONDUCTOR
|
| SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package
600V Silicon Carbide Ultrafast Schottky Diode
Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| C2M1000170D-15 |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| C3M0065090J |
Silicon Carbide Power MOSFET
|
Cree, Inc
|
| SHD620031 SHD620031P |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
| SHD618112AN SHD618112AP SHD618112BN SHD618112BP SH |
HERMETIC SILICON CARBIDE RECTIFIER
|
Sensitron
|
|
