| PART |
Description |
Maker |
| MSICSX05120E3 |
SiC Schottky Diodes
|
Microsemi
|
| IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW10G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW16G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW30G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| LSIC2SD120A20 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
| RJS6005WDPK RJS6005WDPK-00T0 |
SiC Schottky Barrier Diode
600V - 30A - Diode SiC Schottky Barrier Diode
|
Renesas Electronics Corporation
|
| AN4242 |
New generation of 650 V SiC diodes
|
STMicroelectronics
|
| BZX85C47GP BZX85C15GP BZX85C75GP BZX85C7V5GP BZX85 |
150 V, 2 mA, 1.3 W glass passivated zener diode
SMALL SIGNAL SCHOTTKY DIODES 齐纳二极
5.0V PC real-time clock 齐纳二极
Low capacitance, low series inductance and resistance Schottky diodes
Low capacitance small signal Schottky diodes
Small signal Schotky diodes
|
Fagor
Electronics Industry Public Company Limited
Fairchild Semiconductor, Corp.
|
| SML10SIC03NJC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| SCS215AG |
SiC Schottky Barrier Diode
|
Rohm
|
