| PART |
Description |
Maker |
| AFT09MS015N AFT09MS015NT1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT09MP055N AFT09MP055NR1 AFT09MP055GNR1 |
High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs
|
NXP Semiconductors
|
| IRFC350 |
From old datasheet system
N-Channel Enhancement Mode High Ruggedness Series
|
IXYS Corporation
|
| UT--141C--25 CRCW120610R0JNEA MCGPR63V477M13X26--R |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| STH140N8F7-2 |
High avalanche ruggedness
N-channel 80 V, 3.3 mOhm typ., 90 A STripFET F7 Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL90N10F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPA50R650CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STF24N60DM2 |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STP130N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPD60R1K0CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STD85N10F7AG |
High avalanche ruggedness
|
STMicroelectronics
|
