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M83723 10PT10A KDS1001 2SB1494 01701 LBN07079 LTM46 BYW29E
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EDI7F233512V100BNC - 512Kx32 FLASH

EDI7F233512V100BNC_9026429.PDF Datasheet


 Full text search : 512Kx32 FLASH


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PART Description Maker
WS512K32-45 WS512K32-20 WS512K32-25 WS512K32-17 WS 512Kx32 SRAM Module(512Kx32静态RAM模块(存取时5ns
512Kx32 SRAM Module(512Kx32静态RAM模块(存取时0ns
512Kx32 SRAM Module(512Kx32静态RAM模块(存取时7ns
512Kx32 SRAM Module(512Kx32???RAM妯″?锛???????5ns锛?
White Electronic Designs Corporation
WSF512K32-XXX WSF512K32-29H2C WSF512K32-29H2CA WSF 512KX32 SRAM / FLASH MODULE
WEDC[White Electronic Designs Corporation]
WF512K32N-60H1Q5 WF512K32N-90H1Q5 WF512K32N-90H1Q5 512Kx32 5V FLASH MODULE, SMD 5962-94612
WEDC[White Electronic Designs Corporation]
WF512K32N-90H1M5A WF512K32 WF512K32F-120G1UC5 WF51 REED RELAY, 4PST, HG WET, 12V, DIODE RoHS Compliant: No
512Kx32 5V FLASH MODULE, SMD 5962-94612 512Kx32 5V的闪存盘,贴962-94612
RES 3K-OHM 5% 0.75W 250PPM THK-FILM SMD-2010 TR-7-PA 512Kx32 5V的闪存盘,贴962-94612
Reed Relay; Contacts:SPST; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carry Current:1A; Coil Voltage DC Max:5V; Relay Terminals:DIP-14; Relay Mounting:PC Board; Contact Carrying Power:10W
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Standard Recovery Rectifier; Forward Current:20A; Forward Current Average:12.7A; Forward Current Avg Rectified, IF(AV):12.7A; Forward Surge Current Max, Ifsm:300A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
Dry Reed Relay; Contacts:DPST-2NO; Contact Carry Current:1A; Coil Voltage DC Max:5V; Relay Terminals:Thru Hole; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carrying Power:10W; Leaded Process Compatible:Yes RoHS Compliant: Yes
x32 Flash EEPROM Module
100ns; 5V power supply; 512K x 32 flash module, SMD 5962-94612
Electronic Theatre Controls, Inc.
http://
List of Unclassifed Manufacturers
ETC[ETC]
White Electronic Designs
ACT-SF512K32N-39F2C ACT-SF512K32N-37F2T ACT-SF512K ACT-SF512K32 High Speed 512Kx32 SRAM / 512Kx32 Flash Multichip Module 行为SF512K32高12Kx32的SRAM / 512Kx32闪存多芯片模
Hex D-Type Flip-Flops With Clear 16-SOIC 0 to 70 行为SF512K32高12Kx32的SRAM / 512Kx32闪存多芯片模
4-Bit D-type Registers with 3-State Outputs 16-SOIC 0 to 70 行为SF512K32高12Kx32的SRAM / 512Kx32闪存多芯片模
Hex D-Type Flip-Flops With Clear 16-PDIP 0 to 70
4-Bit D-type Registers with 3-State Outputs 16-SO 0 to 70
4-Bit D-type Registers with 3-State Outputs 16-PDIP 0 to 70
Quadruple D-Type Flip-Flops With Clear 16-SOIC 0 to 70
Hex D-Type Flip-Flops With Clear 16-SO 0 to 70
Aeroflex, Inc.
Aeroflex Inc.
AEROFLEX[Aeroflex Circuit Technology]
PUMA2S16000M-025 PUMA77S16000M-020 PUMA2S16000I-02 15NS, 68 PLCC, IND TEMP(EPLD)
SRAM|512KX32|CMOS|PGA|66PIN|CERAMIC
15NS, 68 PLCC, COM TEMP(EPLD)
SRAM|512KX32|CMOS|QFP|68PIN|CERAMIC
20NS, 44 PLCC, IND TEMP(EPLD)
30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA)
15NS, TQFP, COM TEMP, ROHS-A(EPLD)
20NS, 44 TQFP, COM TEMP(EPLD)
7NS, 44 TQFP, COM TEMP, GREEN(EPLD)
30MHZ, 3.3V, 20 PLCC, IND TEMP(FPGA) 静态存储器| 512KX32 |的CMOS |美巡赛| 66PIN |陶瓷
Intel, Corp.
AS8S512K32PEC-25_ET AS8S512K32PEC-25_IT AS8S512K32 16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit
Austin Semiconductor
AS8SLC512K32PEC-15_ET AS8SLC512K32PEC-15_IT AS8SLC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit
Austin Semiconductor
S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
2M X 16 FLASH 3V PROM, 70 ns, PBGA64
2M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 70 ns, PBGA48
4M X 16 FLASH 3V PROM, 90 ns, PBGA48
Spansion, Inc.
SPANSION LLC
EDI8L32512C EDI8L32512C17AC EDI8L32512C15AC EDI8L3    512Kx32 CMOS High Speed Static RAM
White Electronic Design...
WEDC[White Electronic Designs Corporation]
HY29F080G-70 HY29F080G-12 HY29F080T-70 HY29F080R-9 x8 Flash EEPROM 1M X 8 FLASH 5V PROM, 90 ns, PDSO40
8 Megabit (1M x 8), 5 Volt-only, Flash Memory 8兆位米8),5伏只,闪
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
512K X 16 FLASH 3V PROM, 90 ns, PDSO48
512K X 16 FLASH 3V PROM, 70 ns, PBGA48
512K X 16 FLASH 3V PROM, 90 ns, PBGA48
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 90 ns, PDSO44
Spansion, Inc.
SPANSION LLC
 
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