| PART |
Description |
Maker |
| STI360N4F6 STP360N4F6 |
N-channel 40 V, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAK package
High avalanche ruggedness
|
ST Microelectronics
STMicroelectronics
|
| MRFE6VP61K25GSR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 M |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| STH360N4F6-2 |
High avalanche ruggedness
N-channel 40 V, 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
STMicroelectronics
ST Microelectronics
|
| STL120N8F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| STB80N4F6AG |
High avalanche ruggedness
|
STMicroelectronics
|
| IPL65R650C6S |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPA60R190E6 IPA60R190E6-15 IPP60R190E6 IPP60R190E6 |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| IPA60R400CE IPD60R400CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STP130N6F7 |
High avalanche ruggedness
|
STMicroelectronics
|
| IPD60R1K0CE |
Very high commutation ruggedness
|
Infineon Technologies A...
|
| STW65N65DM2AG |
Extremely high dv/dt ruggedness
|
STMicroelectronics
|
| STD85N10F7AG |
High avalanche ruggedness
|
STMicroelectronics
|
