| PART |
Description |
Maker |
| PCI-7032F-00A1E |
Intel? Celeron J1900/N2930 PCI Half-size SBC with DDR3L 1333/Dual GbE/m-SATA/4 RS-232/422/485
|
Advantech Co., Ltd.
|
| MANO872 MANO872-14 |
2 DDR3-1333/1600 MHz max. up to 16 GB memory capacity
|
Axiomtek Co., Ltd.
|
| MANO871 MANO871-14 |
2 DDR3-1333/1600 MHz max. up to 16 GB memory capacity
|
Axiomtek Co., Ltd.
|
| R11-0833 |
ADDR1600C4G11 DDR3L-1600(CL11) 240-Pin R-DIMM 4GB(512M x 72-bits)
|
A-Data Technology
|
| MT8KTF51264HZ |
1.35V DDR3L SDRAM SODIMM
|
Micron Technology
|
| CEM880PVG-CEL-2000E |
On-board 4 GB DDR3L and 1 DDR3L SO-DIMM up to 8 GB
|
Axiomtek Co., Ltd.
|
| CM431655 CM431255 |
Dual SCR POW-R-BLOK?Modules 55 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOK Modules 55 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOK⑩ Modules 55 Amperes/1200-1600 Volts
Dual SCR POW-R-BLOKModules 55 Amperes/1200-1600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| CDD11210 CDD11610 |
Dual Diode POW-R-BLOK??Modules 100 Amperes/1200-1600 Volts
Dual Diode POW-R-BLOK⑩ Modules 100 Amperes/1200-1600 Volts
Dual Diode POW-R-BLOK Modules 100 Amperes/1200-1600 Volts
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| C781PT C781PM C781PS C781PN |
Phase Control SCR 2500 Amperes Average 1600-2100 Volts 4820 A, 1600 V, SCR
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554B |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯64位非ECC
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit Non-ECC 200pin缓冲的SODIMM基于512Mb乙芯4位非ECC
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| MANO861-14 |
2 DDR3-1066/1333 MHz max. up to 16 GB
|
Axiomtek Co., Ltd.
|
