| PART |
Description |
Maker |
| 1SS193 E000243 |
From old datasheet system
ULTRA HIGH SWITCHING APPLICATION
DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| GBAV151 |
The GBAV151 is designed for ultra high speed switching application
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| KTK5131S |
SMOS FET/ Analog Switch Application
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING, ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING ANALOG SWITCH)
N CHANNEL MOS FIELD EFFECT TRANSISTOR (ULTRA-HIGH SPEED SWITCHING/ ANALOG SWITCH)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 1SS352TPH3 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS33707 1SS337 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| L1SS226LT1G-15 |
Ultra High Speed Switching Application
|
Leshan Radio Company
|
| 1SS387 |
ULTRA HIGH SPEED SWITCHING APPLICATION
|
Guangdong Kexin Industrial Co.,Ltd
|
| 1SS19007 1SS190 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS34407 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS301TE85LF |
Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 1SS36007 1SS360 |
Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
