| PART |
Description |
Maker |
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| AM2302N |
Low rDS(on) trench technology
|
TY Semiconductor Co., Ltd
|
| AM3444N |
Low rDS(on) trench technology
|
TY Semiconductor Co., L...
|
| AM2318N |
Low rDS(on) trench technology Low thermal impedance
|
TY Semiconductor Co., Ltd
|
| FDG6316P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| FDG315N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDG328P |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., L...
|
| IRF7663PBF |
Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET
|
International Rectifier
|
| SIGC06T60GS |
For drives-, white goods and resonant applications, Trench- and Fieldstop technology; low threshold voltage
|
Infineon
|
| IKW75N60T |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
|
Infineon Technologies AG
|
