| PART |
Description |
Maker |
| FP35R12W2T4B11 |
EasyPIM2B module PressFIT with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode
54 A, 1200 V, N-CHANNEL IGBT
|
Infineon Technologies AG
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| IDP30E65D1 |
Emitter Controlled Diode Rapid 1 Series
|
Infineon Technologies A...
|
| IRKV56-12 |
Silicon Controlled Rectifier, 86.35 A, 1200 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| FP40R12KE3 |
EconoPIM2 module with trench/fieldstop IGBT3 and Emitter Controlled 3 diode
|
Infineon Technologies AG
|
| FP25R12KT4 |
EconoPIM? module with trench/feldstopp IGBT4 and emitter controlled 4 diode
|
Infineon Technologies AG
|
| SIDC06D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| PS094-315 |
Voltage Controlled Phase Shifter 700-1200 MHz
|
Skyworks Solutions Inc.
|
| FF225R12ME4 |
EconoDUAL3 module with trench/fieldstop IGBT4 and Emitter Controlled HE diode and NTC
|
Infineon Technologies AG
|
| FS50R07N2E4 |
EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
|
Infineon Technologies AG
|
| FP10R06W1E3 |
EasyPIM module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and NTC
|
Infineon Technologies AG
|
