PART |
Description |
Maker |
V10P6HM3 V10P6-M3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
VF60100C |
Trench MOS Schottky technology
|
Vishay Siliconix
|
VB20100C-M3 VB20100CHM3 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ... LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
VFT2045CBP |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
VBT2045CBP VBT2045CBP-E3-4W VBT2045CBP-E3-8W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
VFT3080S-M3-4W |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|
TSF10U60C |
Trench MOS Barrier Schottky Rectifier
|
Taiwan Semiconductor Company, Ltd
|
8L45-DO |
Trench MOS Barrier Schottky Rectifier
|
DONGGUAN YOU FENG WEI E...
|
V10WM100-M3I |
Trench MOS Barrier Schottky Rectifier
|
Vishay Siliconix
|