| PART |
Description |
Maker |
| MBR2X050A120 |
Electrically Isolated Base Plate
|
GeneSiC Semiconductor, ...
|
| MBR2X050A200 |
Electrically Isolated Base Plate
|
GeneSiC Semiconductor, ...
|
| IXFR38N80Q2 |
Electrically Isolated Back Surface
|
IXYS[IXYS Corporation]
|
| IXGR40N60B |
HiPerFASTTM IGBT (Electrically Isolated Backside)
|
IXYS Corporation
|
| IT610 |
(IT6xx) ISOTAB TRIACS ELECTRICALLY ISOLATED
|
Hutson Industries
|
| IT310 IT315 |
(IT3xx) ISOTAB TRIACS ELECTRICALLY ISOLATED
|
ETC
|
| IXGR16N170AH1 |
High Voltage IGBT with Diode Electrically Isolated Tab
|
IXYS Corporation
|
| DSS17-06CR |
HiPerDyn-TM Schottky Diode (Electrically Isolated Back Surface)
|
IXYS[IXYS Corporation]
|
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
| DSEP30-12CR L373 |
HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) 30 A, 1200 V, SILICON, RECTIFIER DIODE
Fast Recovery Diodes
|
IXYS, Corp.
IXYS[IXYS Corporation]
ETC
|
| ISPLSI2096A-100LT128 ISPLSI2096A-125LT128 ISPLSI20 |
Electrically-Erasable Complex PLD
Electrically-ErasableComplexPLD
|
|
| IXFRB24N50Q IXFR24N50Q IXFR26N50Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HIPERFET POWER MOSFETS ISOPLUS247 (ELECTRICALLY ISOLATED BACK SURFACE)
|
IXYS Corporation
|
