| PART |
Description |
Maker |
| NAND01G-B |
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| NAND02GW3B2BN1E NAND02GW3B2BN1F NAND02GW3B2BN6E NA |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| V23826-K305-C363 V23826-K305-C353 V23826-K305-C373 |
Multimode 850 nm 1.0625 Gbit/s Fibre Channel 1.3 Gigabit Ethernet 1x9 Transceiver 多模850纳米1.0625 Gbit / s的光纤通道1.3千兆以太网收发器1x9
|
Infineon Technologies AG
|
| V23815-U1306-M136 V23814-U1306-M136 RXAC16GBIT/S T |
Parallel Optical Links (PAROLI) - PAROLITx, AC, 1,6 Gbit/s, Increased power budget
Parallel Optical Links (PAROLI) - PAROLI?Rx, AC, 1,6 Gbit/s, Increased power budget
PAROLI Tx AC/ 1.6 Gbit/s
PAROLI Tx AC, 1.6 Gbit/s
|
INFINEON[Infineon Technologies AG]
|
| TC58NS100DC |
1 GBit CMOS NAND EPROM
|
Toshiba
|
| H27UAG8T2A |
16 Gbit (2048 M x 8 bit) NAND Flash
|
Hynix
|
| TC58NVG6D2GTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NVG4D2ETA00 |
16 GBIT (2G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| TC58NVG2D4BFT00 |
4 GBIT (512M X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| NAND02GW3B2D |
2-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND flash memories
|
Numonyx B.V
|
| PM8355 |
Short Form PMC-2000791 PM8355 QuadPHY-II 4-Channel 2.125| 2.5 to 3.125 Gbit/s Transceiver with Half-rate Support Short Form Data Sheet [92 kB] 短表PMC - 2000791 PM8355 QuadPHY - 2 4通道2.125 | 2.5.125 Gbit / s的收发器采用半速率支持简表数据表[92 kB]
|
Applied Micro Circuits, Corp.
|
