| PART |
Description |
Maker |
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01G-B |
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
|
STMicroelectronics
|
| V23818-K15-L46 V23818-K15-L16 |
Small Form Factor Single Mode 1300 nm 1.0625 Gbit/s Fibre Channel 1.25 Gigabit Ethernet Transceiver 2x5/2x10 Pinning with LC Connector 纤巧单模1300纳米1.0625 Gbit / s的光纤通道1.25千兆以太网收发器2x5/2x10的LC连接器钢
|
Infineon Technologies AG
|
| TC58NVG6DDJTA00 |
64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| H27UAG8T2A |
16 Gbit (2048 M x 8 bit) NAND Flash
|
Hynix
|
| H27U8G8T2B |
8 Gbit (1024 M x 8 bit) NAND Flash
|
Hynix
|
| H27U4G6F2D H27U4G8F2D H27U4G8F2DKA-BM H27U4G8F2DTR |
4 Gbit (512M x 8 bit) NAND Flash
|
Hynix Semiconductor
|
| TH58100FT |
1-GBIT (128M x 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
| TC58NVG2S3ETA00 |
4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
|
Toshiba Semiconductor
|
| TC58NVG2D4BFT00 |
4 GBIT (512M X 8 BIT) CMOS NAND E2PROM
|
Toshiba
|
| NAND01GW4A2BE06 NAND01GW3A2B-KGD NAND01GW4A2B-KGD |
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory
|
Numonyx B.V
http://
|
