PART |
Description |
Maker |
PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
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MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
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IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
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General Electric Solid State GE Solid State
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HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics ST Microelectronics
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HCS05DMSR FN3557 HCS05MS HCS05D HCS05HMSR HCS05K H |
Inverter, Hex, Open Drain, Rad-Hard, High-Speed, CMOS, Logic From old datasheet system JFET-N-CHANNEL SWITCH Radiation Hardened Hex Inverter with Open Drain HC/UH SERIES, HEX 1-INPUT INVERT GATE, UUC14 JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-30V; Zero Gate Voltage Drain Current Min, Idss:50mA; Gate-Source Cutoff Voltage Max, Vgs(off):-10V; Current Rating:50mA; Voltage Rating:30V
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INTERSIL[Intersil Corporation] Intersil, Corp. HARRIS SEMICONDUCTOR
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MAX11014BGTMT MAX11015BGTM |
Automatic RF MESFET Amplifier Drain-Current Controllers Automatic RF MESFET Amplifier Drain-Current Controllers SPECIALTY CONSUMER CIRCUIT, PQCC48
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Maxim Integrated Produc... Maxim Integrated Products, Inc.
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2SK1603 |
Drain Current ?ID= 2.5A@ TC=25C
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Inchange Semiconductor ...
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2SK1601 |
Drain Current ?ID= 3A@ TC=25C
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Inchange Semiconductor ...
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2SK753 |
Drain Current ?ID=5A@ TC=25C
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Inchange Semiconductor ...
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2SK987 |
Drain Current ?ID=5A@ TC=25C
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Inchange Semiconductor ...
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2SK752 |
Drain Current ?ID= 3A@ TC=25C
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Inchange Semiconductor ...
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2SK755 |
Drain Current ?ID=5A@ TC=25C
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Inchange Semiconductor ...
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