| PART |
Description |
Maker |
| STS12NH3LL |
N-CHANNEL 30V - 0.008 Ohm - 12A SO-8 ULTRA LOW GATE CHARGE STripFET™ MOSFET
N-CHANNEL 30 V - 0.008 ?- 12 A SO-8 ULTRA LOW GATE CHARGE STripFET MOSFET
N-CHANNEL PowerMESH MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL 30 V - 0.008 з - 12 A SO-8 ULTRA LOW GATE CHARGE STripFETMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STS12NH3LL STS12NH3LL07 |
N-channel 30 V - 0.008 Ω - 12 A - SO-8 ultra low gate charge STripFET Power MOSFET
N-channel 30 V - 0.008 ヘ - 12 A - SO-8 ultra low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STF8N90K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| STFI6N80K5 |
Ultra low gate charge
|
STMicroelectronics
|
| SPA07N60C3 SPI07N60C3 SPP07N60C3 SPP07N60C307 |
New revolutionary high voltage technology Ultra low gate charge
|
Infineon Technologies AG
|
| SPB11N60S5 SPB11N60S505 |
New revolutionary high voltage technology Ultra low gate charge
|
http://
|
| SPN01N60C3 SPN01N60C305 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| STS5N15M3 |
N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh?/a> III Power MOSFET
|
STMicroelectronics
|
| SPP04N60C3 SPA04N60C3 SPP04N60C309 |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated
|
Infineon Technologies AG
|
| SPP20N60C309 SPP20N60C3 SPI20N60C3 SPA20N60C3 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| SPB21N50C3 SPB21N50C305 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| STL8NH3LL_06 8NH3L STL8NH3LL STL8NH3LL06 |
N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
