| PART |
Description |
Maker |
| STL8NH3LL |
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLATULTRA LOW GATE CHARGE STripFETMOSFET N沟道30 0.012з - 8甲的PowerFLAT⑩超低栅极电荷STripFET⑩MOSFET
N-CHANNEL 30 V - 0.012 з - 8 A PowerFLAT⑩ ULTRA LOW GATE CHARGE STripFET⑩ MOSFET
N-CHANNEL MOSFET
N-CHANNEL 30 V - 0.012 ?- 8 A PowerFLAT ULTRA LOW GATE CHARGE STripFET MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STL6NM60N |
N-channel 600 V - 0.85 Ω - 5.75 A - PowerFLAT (5x5) ultra low gate charge MDmesh II Power MOSFET
N-channel 600 V - 0.85 ヘ - 5.75 A - PowerFLAT⑩ (5x5) ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| STP30NM30N |
N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET
N-channel 300V - 0.078ヘ - 30A - TO-220 Ultra low gate charge MDmesh⑩ II Power MOSFET
|
STMicroelectronics
|
| STF9N80K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| STP7LN80K5 |
Ultra-low gate charge
|
STMicroelectronics
|
| STS5N15M3 |
N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh?/a> III Power MOSFET
|
STMicroelectronics
|
| SPI11N60CFD |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| SPP12N50C3 SPP12N50C307 SPA12N50C3 SPI12N50C3 |
New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated
|
Infineon Technologies AG
|
| SPB12N50C305 |
New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
|
Infineon Technologies AG
|
| AND8139D NL17SV16XV5T2 AND8139 NL17SV00XV5T2 NL17S |
2-Input OR Gate, Ultra-Low Voltage
Non Inverting Buffer, Ultra Low Voltage
Single 2-Input NOR Gate, Ultra-Low Voltage
Single 2-Input NAND Gate, Ultra-Low Voltage
ULTRA-LOW VOLTAGE MINIGATE DEVICES SOLVE 1.2 V INTERFACE PROBLEMS
|
ONSEMI[ON Semiconductor]
|
