| PART |
Description |
Maker |
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PDTA124E PDTA124EEF PDTA124EM PDTA124ET PDTA124EEF |
PNP resistor-equipped transistors; R1 = 22 k惟, R2 = 22 k惟
PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 22 kOhm
100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors
NXP Semiconductors N.V.
|
| PDTA115ES PDTA115E PDTC115EU PDTA115EE PDTA115EEF |
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT416 (SC-75); Container: Tape reel smd
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW 20 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
PDTA115E series; PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm
PNP resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PEMD3 PEMD3_2 |
NPN/PNP RESISTOR-EQUIPPED TRANSISTORS; R1 = 10 KOHM, R2 = 10 KOHM
From old datasheet system
NPN/PNP resistor-equipped transistors; R1 = 10 kohm R2 = 10 kohm
NPN/PNP resistor-equipped transistors; R1 = 10 kohm/ R2 = 10 kohm
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PDTA143ZEF PDTA143ZU PDTA143ZK |
PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=4.7千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 4.7 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| PEMD9 |
NPN/PNP resistor-equipped
|
Philips
|
| PEMD16-PUMD16-15 |
NPN/PNP resistor-equipped transistors R1 = 22 k? R2 = 47 k?
|
NXP Semiconductors
|
| PEMD15-PUMD15-15 |
NPN/PNP resistor-equipped transistors R1 = 4.7 k? R2 = 4.7 k?
|
NXP Semiconductors
|
| PUMD48 |
NPN/PNP resistor-equipped transistors
|
PHILIPS[Philips Semiconductors]
|
| PEMD15 PUMD15 |
NPN/PNP resistor-equipped transistors; R1 = 4.7 kW, R2 = 4.7 kW
|
NXP Semiconductors
|
| PEMD10 PUMD10 |
NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ
NPN/PNP resistor-equipped transistors; R1 = 2.2 k楼?, R2 = 47 k楼?
|
NXP Semiconductors
|
