PART |
Description |
Maker |
IXFN26N90 IXFN25N90 IXFN-26N90 IXFN-25N90 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFETTM Power MOSFETs Single Die MOSFET HiPerFET Power MOSFETs Single Die MOSFET 25 A, 900 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
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http:// IXYS[IXYS Corporation] IXYS, Corp.
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IXFE80N50 |
HiPerFET Power MOSFETs Single Die MOSFET
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IXYS Corporation
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AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement) 8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
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Advanced Micro Devices SPANSION[SPANSION]
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0936013907 |
GWconnect STD - Standard, Single Lever Surface Mount Housing, Die-cast Aluminum
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Molex Electronics Ltd.
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K4H510838D-UC/LA2 K4H510838D-UC/LB0 K4H510838D-UC/ |
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片DDR SDRAM的规格铅66 TSOP-II免费(符合RoHS DIODE ZENER SINGLE 500mW 8.8Vz 20mA-Izt 0.025 0.1uA-Ir 7 SOD-123 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费(符合RoHS DIODE ZENER SINGLE 200mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-323 3K/REEL 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费(符合RoHS Dual Wide Bandwidth High Output Drive Single Supply Op Amp With Shutdown 10-MSOP-PowerPAD 0 to 70 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费(符合RoHS 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant) 12Mb芯片与DDR SDRAM的规格铅66 TSOP-II免费(符合RoHS DIODE ZENER SINGLE 150mW 39Vz 0.05mA-Izt 0.05 0.05uA-Ir 29.6 SOD-523 3K/REEL DIODE ZENER SINGLE 500mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-123 3K/REEL DIODE ZENER SINGLE 150mW 43Vz 0.05mA-Izt 0.05 0.05uA-Ir 32.6 SOD-523 3K/REEL
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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IRG4CC50WB |
IGBT Die in Wafer Form 600 V Size 5 WARP Speed IRG4CC50WB IGBT Die in Wafer Form
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Hittite Microwave Corporation International Rectifier
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IRFP151 IRFP153 IRFP152 IRF150 IRF152 IRFP150 IRFC |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE (IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
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International Rectifier IXYS[IXYS Corporation]
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K4H511638C-UC K4H511638C-UCA2 K4H511638C-UCB0 K4H5 |
8-Bit, 20 kSPS ADC Serial Out, uProcessor Periph./Standalone, Rem. Op w/Ser. Data Link, Mux option 14-SOIC 荤的512Mb芯片DDR SDRAM内存规格 Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-PDIP -40 to 125 荤的512Mb芯片DDR SDRAM内存规格 512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格 Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格 Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 荤的512Mb芯片DDR SDRAM内存规格 8-Bit, 392 kSPS ADC Parallel Out, Microprocessor Peripheral, On-Chip Track-and-Hold, Single Channels 20-PDIP 荤的512Mb芯片DDR SDRAM内存规格
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http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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K4H510738E-TC/LAA K4H510738E-TC/LB0 K4H510738E-TC/ |
Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD -40 to 125 堆叠12Mb电子芯片DDR SDRAM内存规格(x4/x8 Dual Wide Bandwidth High Output Drive Single Supply Op Amp 8-SOIC -40 to 125 Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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SIDC00D60SIC2SAWN SIDC00D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 2A die sawn Diodes - HV Chips - 600V, 2A die unsawn
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Infineon
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