| PART |
Description |
Maker |
| MSK613-15 MSK613H |
Ultra Low Quiescent Current - ±10mA for High Voltage
HIGH VOLTAGE/HIGH SPEED SURFACE MOUNT AMPLIFIER
|
M.S. Kennedy Corporatio...
Anaren Microwave
|
| IXSH45N120B IXSH45B120B IXST45B120B |
High Voltage IGBT S Series - Improved SCSOA Capability
IGBT Discretes: Low Saturation Voltage Types
High Voltage IGBT(VCES200V，VCE(sat).0V的高电压绝缘栅双极晶体管) 75 A, 1200 V, N-CHANNEL IGBT, TO-247AD
1200V high voltage IGBT
|
IXYS Corporation
IXYS, Corp.
|
| BF623 Q62702-F1053 |
PNP Silicon High-Voltage Transistor (Suitable for video output stages in TV sets High breakdown voltage Low collector-emitter saturation voltage)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| KSE5020 KSE5020AS KSE5020S |
High Voltage, High Quality High Speed Switching : tF=0.1μs
Feature
NPN Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| SB3H100-E3_54 SB3H100-E3_73 SB3H90 SB3H9008 SB3H10 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| SB1H100-E3_54 SB1H100-E3_73 SB1H100 SB1H100HE3_54 |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| KTC4526 |
TRIPLE DIFFUSED NPN TRANSISTOR (HIGH VOLTAGE AND HIGH RELLABILITY HIGH SPEED SWITCHING, WIDE SOA)
|
KEC Holdings
KEC(Korea Electronics)
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| MSK130 |
ULTRA HIGH VOLTAGE HIGH SPEED DIFFERENTIAL OP-AMP
Ultra High Voltage High Speed Differential Operational Amplifier(FET输入，超高电压高速差分运算放大器)
|
List of Unclassifed Manufacturers
M.S. Kennedy Corporation
|
| 2N3725 |
HIGH VOLTAGE, HIGH CURRENT, HIGH SPEED, NPN SWITCHING
|
Seme LAB
|
