| PART |
Description |
Maker |
| MHT8P20 MTP3N12 VN2410B |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | TO-258AA
TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 240V V(BR)DSS | 700MA I(D) | TO-39 晶体管| MOSFET的| N沟道| 240伏五（巴西）直| 700mA的一d）| TO - 39封装
|
Microchip Technology, Inc.
|
| STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| FDS6961AZ FDS6961AZL86Z FDS6961AZL99Z |
3.5 A, 30 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET SO-8
TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
Dual N-Channel Logic Level PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFF9222 IRF025 IRFF9223 IRFF9133 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 2A I(D) | TO-205AA
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 16A I(D) | TO-204AA
TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 2A I(D) | TO-205AA
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5.5A I(D) | TO-205AF
|
|
| 2SK1547 2SK947 2SK903 |
MOSFET Transistor
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,12A I(D),TO-220AB
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,4A I(D),TO-220
|
Fuji Electric
Fuji Semiconductors, Inc.
|
| FDN342P |
P-Channel 2.5V Specified PowerTrench MOSFET
TRANSISTOR|MOSFET|P-CHANNEL|20VV(BR)DSS|2AI(D)|TO-236AB
P-Channel 2.5V Specified PowerTrench⑩ MOSFET
|
Fairchild Semiconductor
|
| IRF631 IRFZ45 IRFZ30 |
TRANSISTOR|MOSFET|N-CHANNEL|150VV(BR)DSS|9AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|60VV(BR)DSS|35AI(D)|TO-220AB
TRANSISTOR|MOSFET|N-CHANNEL|50VV(BR)DSS|30AI(D)|TO-220AB
|
|
| OM11N55SAZ OM11N60SAZ OM11N60CSAZ |
TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 11A I(D) | TO-259AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-259AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 11A I(D) | TO-254AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 11A条（丁）|54AA
|
|
| APT1003R5CN APT1003R5GN APT4055GN APT601R2CN APT80 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-254AA
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 3A I(D) | TO-220HERM
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 9.5A I(D) | TO-220HERM
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.5A I(D) | TO-254AA
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | TO-220HERM
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5A I(D) | TO-254AA
|
|
| 2SJ404 2SJ405 2SK2163 |
TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6A I(D) | TO-220AB
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 40A I(D) | TO-220VAR 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 40A条（丁）|20VAR
|
EPCOS AG
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
