| PART |
Description |
Maker |
| HPMD-7905-TR1 HPMD-7905 HPMD-7905-BLK |
HPMD-7905 · FBAR Duplexer for US PCS Band
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| D6RB1G960E1HB |
FBAR/SAW Devices (SAW Duplexers)
|
Taiyo Yuden (U.S.A.), I...
|
| F6QB2G350P2BH-J |
FBAR/SAW Devices (SAW Type)
|
Taiyo Yuden (U.S.A.), I...
|
| D6HK1G960DK12 |
FBAR Filter
|
Taiyo Yuden (U.S.A.), I...
|
| D6HH1G960BH97 |
FBAR Filter
|
Taiyo Yuden (U.S.A.), I...
|
| KFX0327T |
900MHz Cordless Phone
SPECIFICATIONS FOR SAW DUPLEXER (RF DUPLEXER FOR CORDLESS PHONE ISM)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
|
| CMD810C902 CMD810C902-947P25A |
DIELECTRIC DUPLEXER SAMPLE
DIELECTRIC DUPLEXER SAMPLE SPECIFICATION
|
SIPAT Co,Ltd
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| EPC4 EPC8 |
Configuration Devices for SRAM-Based LUT Devices
|
Altera Corporation
|
| NANOSMDC075F |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| SRP420 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
