| PART |
Description |
Maker |
| SDRS614 |
250 mA 2,200 VOLTS FAST RECOVERY HIGH VOLTAGE RECTIFIER
|
Solid States Devices, I...
|
| CS640525 |
Fast Recovery Single Diode Module 250 Amperes/500 Volts
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
|
| SDRMFSMS SDR9JF SDR9KF SDR9KFSMS SDR9MF SDRJFSMS |
9.0 AMPS 600 - 1000 VOLTS 250 ns typical FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| BAS21TPT |
FAST SWITCHING DIODE VOLTAGE RANGE 250 Volts CURRENT 200 mAmpere
|
Chenmko Enterprise Co. Ltd.
|
| BS108ZL1 BS108/D BS108-D |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92
Fast Recovery Glass Passivated Rectifier Diodes
|
ON Semiconductor
|
| MJ10021 ON1972 MJ10020 |
From old datasheet system
60 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 200 AND 250 VOLTS 250 WATTS
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| SHM80F SHM100F SHM20F SHM60F SHM140F SHM25F SHM40F |
FAST RECOVERY HIGH VOLTAGE RECTIFIER
50-250 mA 1500-14000 VOLTS 150-200 nsec HIGH VOLTAGE RECTIFIER 0.1 A, 6000 V, SILICON, SIGNAL DIODE
50-250 mA 1500-14000 VOLTS 200 usec HIGH VOLTAGE RECTIFIER 0.15 A, 4000 V, SILICON, SIGNAL DIODE
FAST RECOVERY HIGH VOLTAGE RECTIFIER
RECTIFIER
|
Solid States Devices, Inc
Solid State Devices, Inc.
Solid States Devices, I...
|
| CM350DU-5F |
Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 350 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD350 Amperes/250 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| 2124-12L |
12 W, 22 V, 2200-2400 MHz common base transistor
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 12; P(in) (W): 2.25; Gain (dB): 7.5; Vcc (V): 22; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
12 Watts, 22 Volts, Class C Microwave 2200 - 2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| CM400DU-5F |
Trench Gate Design Dual IGBTMOD?/a> 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD⑩ 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD 400 Amperes/250 Volts
Trench Gate Design Dual IGBTMOD400 Amperes/250 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| C0805C222JAGACTU |
SMD Comm C0G, Ceramic, 2200 pF, 5%, 250 V, C0G, SMD, MLCC, Ultra-Stable, Low Loss, Class I, 0805
|
Kemet Corporation
|
| BUV22_D ON0258 BUV22 |
SITCHMODE Series NPN Silicon Power Transistor
From old datasheet system
40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS 250 WATTS
|
ON Semiconductor
Motorola, Inc
|
