PART |
Description |
Maker |
QVS212CG020BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
QVS212CG0R6BDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
QVS212CG010CDHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
QVS107CG430JCHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE Fast Recovery Diode Modules, F Series (for IGBT speed switching) MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
QVS107CG180JCHT |
High Frequency Medium-High Voltage Multilayer Ceramic Capacitors for Automotive / Industrial Applications
|
Taiyo Yuden (U.S.A.), I...
|
2SC3053 |
FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
ENA1118A |
High-Frequency Medium-Output Amplifier Applications
|
Sanyo Semicon Device
|
NE678M04-T2-A NE678M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
CEL[California Eastern Labs]
|
NE664M04 |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs
|
2SC1781H 2SC1781 |
From old datasheet system HIGH FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|