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FDMA1430JP - Max rDS(on) = 90 mΩ at VGS = -4.5 V, ID = -2.9 A

FDMA1430JP_8984861.PDF Datasheet


 Full text search : Max rDS(on) = 90 at VGS = -4.5 V, ID = -2.9 A
 Product Description search : Max rDS(on) = 90 at VGS = -4.5 V, ID = -2.9 A


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N-Channel MOSFETs (>500V…900V); Package: PG-TO262-3; VDS (max): 500.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 190.0 mOhm; ID(max) @ TC=25°C: 21.0 A; IDpuls (max): 63.0 A;
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
FDS89161LZ Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 2.7 A
Fairchild Semiconductor
2SK3377 Low on-resistance RDS(on)1 = 44 m MAX. (VGS = 10 V, ID = 10 A)
TY Semiconductor Co., Ltd
2SK3433 Super low on-state resistance: RDS(on)1 = 26m MAX. (VGS= 10 V, ID = 42 A)
TY Semiconductor Co., L...
2SK3113 Low on-state resistance RDS(on) = 4.4 MAX. (VGS = 10 V, ID= 1.0 A) Avalanche capability ratings
TY Semiconductor Co., Ltd
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JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:-25V; Zero Gate Voltage Drain Current Min, Idss:12mA; Zero Gate Voltage Drain Current Max, Idss:30mA; Gate-Source Cutoff Voltage Max, Vgs(off):-4V; Package/Case:TO-78
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2.93 V, 3-pin microprocessor reset circuit
2.63 V, 3-pin microprocessor reset circuit
4.00 V, 3-pin microprocessor reset circuit
ANACHIP[Anachip Corp]
ETC[ETC]
复位半导
NEC, Corp.
Kingbright, Corp.
KX7N10L VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A
TY Semiconductor Co., Ltd
PST993 PST993C PST993D PST993E PST993F PST993G PST MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
MITSUMI ELECTRIC CO LTD
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Mitsumi Electronics, Corp.
IPP05N03L IPB05N03L 80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
OptiMOS Buck converter series
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OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
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INFINEON[Infineon Technologies AG]
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Infineon
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SERIAL 2K (256 x 8) EEPROM 串行2K56 × 8)的EEPROM
SERIAL 2K (256 x 8) EEPROM 串行2K256 × 8)的EEPROM
Programmable Logic IC; Logic Type:Programmable; No. of Macrocells:189; Package/Case:240-PQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
IC MAX 7000 CPLD 32 44-TQFP
MOSFET, N, SO-8; Transistor type:MOSFET; Current, Id cont:4A; Resistance, Rds on:6.7R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak
STMicroelectronics N.V.
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STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
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OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL
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INFINEON[Infineon Technologies AG]
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