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CY14E116S-BZ25XI - 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM

CY14E116S-BZ25XI_8979527.PDF Datasheet


 Full text search : 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM
 Product Description search : 16-Mbit (2048K × 8/1024K × 16/512K × 32) nvSRAM


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EN29LV320AB-90BI EN29LV320AB-70T EN29LV320AB-70TP 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 32兆位096K × 8 2048K x 16位)闪存引导扇区闪存,CMOS 3.0伏,
Eon Silicon Solution, Inc.
EN29LV320B-70TC EN29LV320T-70TC EN29LV320B-70BCP E 32 Megabit (4096K x 8-bit / 2048K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 32兆位096K × 8 2048K x 16位)闪存引导扇区闪存,CMOS 3.0伏,
Electronic Theatre Controls, Inc.
Eon Silicon Solution, Inc.
A29800 A29800UV-90 A29800UM-90 A29800TM-90 A29800T 240 x 128 pixel format, LED or EL Backlight 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存
1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存
PULSER PROBE 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存
Aerials (Antennas); Bandwidth Max:500MHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存
Dipole Antenna; Bandwidth Max:2.2GHz; For Use With:Hand-Held Spectrum Analyzer; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 1024K × 8 16位为512k ×电压的CMOS 5.0只,引导扇区闪存
240 x 128 pixel format, CFL Backlight with power harness
128 x 64 pixel format, LED Backlight available
AMIC Technology, Corp.
AMIC Technology Corporation
LY6220488ML LY6220488I 2048K X 8 BIT LOW POWER CMOS SRAM
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