PART |
Description |
Maker |
TSM070N07PQ56 |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
TSM4NB65CH TSM4NB65CI TSM4NB65CP TSM4NB65CZ |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
TSM2N7002KCX |
Discrete Devices-MOSFET-Single N-Channel
|
Taiwan Semiconductor
|
MBR2035CT-Y MBR2045CT-Y MBR2090CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
MBR30150CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
DZQA5V6AXV5-7 |
Discrete - Protection Devices - Zener TVSs
|
Diodes
|
UGF5J |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
ESH1GM ESH1DM |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
UGF12J |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
UGF1004G UGF1005G UGF1006G UGF1007G |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
IDT61298S25TC IDT61298S25TCB IDT61298S25L28B IDT61 |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM 80V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM 600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package x4的SRAM x4 SRAM x4的SRAM
|
STMicroelectronics N.V. Unisonic Technologies Co., Ltd. HIROSE ELECTRIC Co., Ltd. TE Connectivity, Ltd.
|