| PART |
Description |
Maker |
| BZX79B75 BZX79B27 BZX79B2V4 BZX79B2V7 |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| BZT55B10 BZT55B4V7 BZT55B4V3 BZT55B56 BZT55B5V1 BZ |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| UDZS7V5B |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| BZT52C6V2K BZT52C51K BZT52C9V1K BZT52C75K BZT52C7V |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| BZY55B18 BZY55B3V6 BZY55B8V2 |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| LLZ5221B LLZ5222B LLZ5223B LLZ5224B LLZ5226B LLZ52 |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| BZT52B9V1-G BZT52B8V2-G BZT52B6V8-G BZT52B33-G BZT |
Discrete Devices-Diode-Zener Diode & Array
|
Taiwan Semiconductor
|
| 1N5397S 1N5392S |
Discrete Devices -Diode-Standard Rectifier
|
Taiwan Semiconductor
|
| STK22C48-P45 STK22C48-P45I STK22C48-N20 STK22C48-N |
DIODE TVS 170V 400W UNI 5% SMA
DIODE TVS 17V 400W BIDIR 5% SMA
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA RoHS Compliant: Yes
DIODE TVS 100V 400W UNI 5% SMA
DIODE TVS 10V 400W UNI 5% SMA
DIODE TVS 30V 400W BIDIR 5% SMA
NVRAM (EEPROM Based)
DIODE TVS 120V 400W BIDIR 5% SMA
DIODE TVS 300V 400W UNI 5% SMA
DIODE TVS 36V 400W UNI 5% SMA
DIODE TVS 130V 400W UNI 5% SMA
DIODE TVS 180V 400W UNI 5% SMA
DIODE TVS 18V 400W BIDIR 5% SMA
DIODE TVS 200V 400W UNI 5% SMA
DIODE TVS 150V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 20V 400W BIDIR 5% SMA NVRAM中（EEPROM的基础
DIODE TVS 400V 400W UNI 5% SMA NVRAM中（EEPROM的基础
|
ZETTLER electronics GmbH
Electronic Theatre Controls, Inc.
|
| UG6005PT |
Discrete Devices -Diode-Ultra Fast Rectifier
|
Taiwan Semiconductor
|
| SD05-01FTG |
450W Discrete Unidirectional TVS Diode
|
Littelfuse
|
| Z85230-20VSC Z85230-16VSC Z80230-10PSC Z85230-16PS |
FUSE - PTC 0.5/1A SMT 1812
DIODE TVS 7.5V 1.5KW BI-DIR
Communications Controller 通信控制
TVS Diode; Diode Type:Bidirectional TVS; Stand-Off Voltage, VRWM:342V; Breakdown Voltage, Vbr:380V; Package/Case:DO-201; Leaded Process Compatible:Yes; No. of Lines Protected Max:1; Peak Pulse Current IPP @ 10x1000uS:2.8A RoHS Compliant: Yes 通信控制
DIODE TVS 100V 1500W 5% BI AXL 通信控制
TVS Diode; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Microsemi, Corp.
|
