PART |
Description |
Maker |
AN1078 |
ST7 PWM DUTY CYCLE SWITCH IMPLEMENTING TRUE 0% & 100% DUTY CYCLE
|
SGS Thomson Microelectronics
|
MK4096P-6 MK4096N-6 MK4096N-11 MK4096N-16 MK4096P- |
4096x1-bit dynamic RAM, 250ns acces time, 375ns cycle time, max. power 450mW. 4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW. 4096x1-bit dynamic RAM, 300ns acces time, 425ns cycle time, max. power 385mW.
|
Mostek
|
MAX1836 MAX1836EUT33 MAX1836EUT33-T MAX1836EUT50 M |
CHOKE COIL 100UH 600MA SMD 24V Internal Switch / 100% Duty Cycle / Step-Down Converters From old datasheet system DC/DC CONVERTER, 3.3V,BICMOS,TSOP,6PIN "24V Internal Switch, 100% Duty Cycle, Step-Down Converters"
|
Maxim Integrated Products, Inc. Maxim Integrated Products Inc MAXIM[Maxim Integrated Products] MAXIM - Dallas Semiconductor
|
IS61LPD51218T/D IS61LPD25632T/D IS61SPD25632T/D IS |
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM 256K × 3256K × 3612K采样× 18 SYNCHRONOU?管道,双循环取消选择静态RAM 256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100 256K x 32/ 256K x 36/ 512K x 18 SYNCHRONOUS PIPELINE/ DOUBLE-CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc. Integrated Silicon Solution Inc
|
CY7C1561V18-333BZC CY7C1561V18-333BZI CY7C1563V18 |
72-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 72-Mbit QDR?II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
|
Cypress Semiconductor
|
CY7C1145V18-300BZXC CY7C1156V18-300BZXC CY7C1141V1 |
18-Mbit QDR垄芒-II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency) 18-Mbit QDR?II SRAM 4-Word Burst Architecture (2.0 Cycle Read Latency)
|
Cypress Semiconductor
|
SWE81800 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
SWE121800 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
SWE61000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
SWE230000 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|
SWE122300 |
Deep cycle battery
|
Shenzhen Sunnyway Battery Tech Co.Ltd.
|