PART |
Description |
Maker |
K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
K4D26323RA-GC |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
K4D28163HD |
2M x 16Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
422B 422E |
Max voltage:24V; 200mA; data processing data line protector. For data processing equipment, long line transmission systems, control processing computers, building managenent systems
|
Protek Devices
|
W631GG6KB-15 W631GG6KB12A W631GG6KB12I W631GG6KB12 |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
W9725G6JB25I |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
SDA006 SDA006-7 |
Data Line Protection DATA BUS TRANSIENT SUPPRESSOR/3-PHASE FULL WAVE BRIDGE RECTIFIER
|
Dionics Inc. DIODES[Diodes Incorporated]
|
AT-45DB081B 45DB081B |
AT-45DB081B DATA FLASH RELIABILITY DATA
|
Atmel Corp. ATMEL[ATMEL Corporation]
|