PART |
Description |
Maker |
NPTB00004 |
Gallium Nitride 28V, 5W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution...
|
NPTB00004A NPTB00004A-15 |
Gallium Nitride 28V, 5W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
NPT1015 NPT1015-15 |
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
NPT1010 NPT1010-15 |
Gallium Nitride 28V, 100W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu... List of Unclassifed Man...
|
WP710A10ID5V |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
DGS10-022AS |
Gallium Arsenide Schottky Rectifier 9 A, 220 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB
|
IXYS, Corp.
|
MGRB2018CT_D ON1883 MGRB2018CT MGRB2018 |
Power Manager Gallium Arsenide Power Rectifier From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
|
ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE 40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE 150 V, SILICON, PIN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
RFP-250250N6Z50-2 |
Aluminum Nitride Terminations 16 Watts, 50ohm
|
Anaren Microwave
|