| PART |
Description |
Maker |
| MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MHF-20 MHF-40 MHF-34-SGL MHF-10 MHF-50 MHF-30 MHF- |
.100 IDC LATCH HEADER .100 X .100 [2.54 X 2.54]
|
Adam Technologies, Inc.
|
| MHR10HUAS MHR14HUAS MHR16HUAS MHR20HUAS MHR24HUAS |
.100 LATCH HEADER .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| MHR |
.100 LATCH HEADER .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM |
NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NSBA123JF3T5G NSBA123TF3T5G NSBA143EF3T5G NSBA143Z |
BRT, PNP, 50 V, 100 mA, 100 k, none, SOT-1123 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Digital Transistors (BRT)
|
ON Semiconductor
|
| 2-111382-0 |
KIT, DIP PLUG, PREASSEMBLED, .100 X .100 CENTERLINE, AMP-LATCH
|
Tyco Electronics
|
| T8102 |
H.100/H.110 Interface and Time-Slot Interchanger(H.100/H.110接口和干线时隙交换机)
|
Lineage Power
|
| VMIL100 |
100 Watts, 28 Volts, Class AB Defcom 100 - 200 MHz
|
GHZTECH[GHz Technology]
|
| 4-103328-0 4-103328-1 4-103328-2 4-103328-3 4-1033 |
ASSEMBLY, HEADER, BREAKAWAY, MOD II, DOUBLE ROW, 100 X 100 C/L
|
Tyco Electronics
|
| 146311-8 |
.100 Inch Centerline-AMPMODU Headers; 16 MODII HDR DRRA B/A 100 W/HD ( AMP )
|
Tyco Electronics
|
