| PART |
Description |
Maker |
| TC14L TC11L TC11L003 TC11L007 TC14L040 TC11L005 TC |
7 K usable gate, 1.0 micron, CMOS gate array
300 usable gate, 1.5 micron, CMOS gate array
700 usable gate, 1.5 micron, CMOS gate array
4 K usable gate, 1.0 micron, CMOS gate array
500 usable gate, 1.5 micron, CMOS gate array
|
Toshiba Semiconductor
|
| N25Q256A11ESF40 N25Q256A11ESF40F N25Q256A11E1240 |
Micron Serial NOR Flash Memory
|
Micron Technology
|
| ATC20 |
ATC20 Summary [Updated 9/02. 11 Pages] The ATC20 Cell-based ASIC (CBIC) family features a comprehensive library of 0.21-micron standard logic and I/O
The ATC20 Cell-based ASIC (CBIC) family features a comprehensive library of 0.21-micron standard logic and I/O cells designed to operate with a supply voltage of 1.8V /- 0.15V and memory cells compiled to the precise requirements of the d
|
ATMEL Corporation
|
| MG2RTP |
Rad Hard 0.5 Micron Sea of Gates
|
Atmel
|
| M29F800FB55N3E2 |
Micron Parallel NOR Flash Embedded Memory
|
Micron Technology
|
| UPD966XX UPD936XX UPD946XX UPD956XX CB-C8 |
3-VOLT, 0.5-MICRON CELL-BASED CMOS ASIC
|
NEC[NEC]
|
| FRM5W232BS |
Incorporates a 30 micron InGaAs Avalanche Photodiode 采用0微米铟镓砷雪崩光电二极管
|
Fujitsu, Ltd.
FUJITSU[Fujitsu Media Devices Limited]
Fujitsu Component Limited.
|
| MRF286S MRF286 |
The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
|
Motorola, Inc
|
| N25Q032A13ESF40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| PC28F512P30EF PC28F512P30BF PC28F512P30EFA PC28F51 |
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
Micron Parallel NOR Flash Embedded Memory (P30-65nm)
|
Micron Technology
|
